资料介绍
A 25-W 5-GHz GaAs FET Amplifier for a Microwave Landing SystemIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. MTT-29, NO. 6, JUNE 1981
579
A 25-W 5-GHz GaAs FET Amplifier Microwave Landing System
KAZUHIKO HONJO AND YOICHIRO TAKAYAMA, MEMBER, IEEE
for a
A bstract― developed System. hermetically constructed pcrcent exceffent 6°/dB
A 25-W
29-dB
gain 5-GHx
GaAs intemafly 30-W
FET
amplifier
has been Landing F’ET’s 18.5an to Fig. 1. has been with
Lo
LZ
L4
La
which can be used for a transmitter By using simply. AM/PM 1O-W class praeticaf packages, The nmpfifier conversion amplifiers. sealed in ceramic
in the Microwave matched GaAs amplifier
the four-stage
provides of
power output 10/dB,
%-A
Equivrdent circuit
A
for internally matched GaAs FET.
power efficiency for TWT
at 17-dBm power input level. It afsu exhibited approxim
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