资料介绍
FRAM SPI Reads & Writes and Data Protection During Power CyclesAN-302
FRAM SPI Reads & Writes and Data
Protection During Power Cycles
Applies to All SPI FRAM Devices except FM25640
OVERVIEW
Non-volatile FRAM memory offers tremendous write speed. This feature is most evident in the high
speed serial SPI and bytewide parallel memories. Hundreds of bytes can be written in tens of
microseconds. EEPROM and Flash memory require tens of milliseconds to do the same. Writing data
quickly before losing power is particularly useful in systems that require saving machine state
information, parameter settings, or other vital data. With this in mind, care must be taken in controlling
signals at power-up and power-down. A FRAM device that is active during a power cycle will
potentially overwrite array data very quickly. It is important to un
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